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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF137/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode
. . . designed for wideband large-signal output and driver stages up to 400 MHz range. * Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency -- 60% (Typical) * Small-Signal and Large-Signal Characterization * Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * Low Noise Figure -- 1.5 dB (Typ) at 1.0 A, 150 MHz * Excellent Thermal Stability, Ideally Suited For Class A Operation * Facilitates Manual Gain Control, ALC and Modulation Techniques
MRF137
30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FET
D
G CASE 211-07, STYLE 2 S Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 40 5.0 100 0.571 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.75 Unit C/W
Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6
(c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994
MRF137 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate-Source Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 4.0 1.0 Vdc mAdc Adc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) Forward Transconductance (VDS = 10 V, ID = 500 mA) VGS(th) gfs 1.0 500 3.0 750 6.0 -- Vdc mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss -- -- -- 48 54 11 -- -- -- pF pF pF
FUNCTIONAL CHARACTERISTICS
Noise Figure (VDS = 28 Vdc, ID = 1.0 A, f = 150 MHz) Common Source Power Gain (VDD = 28 Vdc, Pout = 30 W, IDQ = 25 mA) f = 150 MHz (Figure 1) f = 400 MHz (Figure 14) No Degradation in Output Power NF Gps 13 -- 50 16 7.7 60 -- -- -- % -- 1.5 -- dB dB
Drain Efficiency (Figure 1) (VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 25 mA) Electrical Ruggedness (Figure 1) (VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 25 mA, VSWR 30:1 at All Phase Angles)
RFC2 R4 BIAS ADJUST R3 R2 C6 C5 R1 RF INPUT C1 L1 DUT C2 C3 C4 L2 L3 D1 C7 C9 + - C10 + VDD = 28 V
C8 RFC1
RF OUTPUT
C1 -- Arco 403, 3.0- 35 pF, or equivalent C2 -- Arco 406, 15- 115 pF, or equivalent C3 -- 56 pF Mini-Unelco, or equivalent C4 -- Arco 404, 8.0- 60 pF, or equivalent C5 -- 680 pF, 100 Mils Chip C6 -- 0.01 F, 100 V, Disc Ceramic C7 -- 100 F, 40 V C8 -- 0.1 F, 50 V, Disc Ceramic C9, C10 -- 680 pF Feedthru D1 -- 1N5925A Motorola Zener
L1 -- 2 Turns, 0.29 ID, #18 AWG Enamel, Closewound L2 -- 1-1/4 Turns, 0.2 ID, #18 AWG Enamel, Closewound L3 -- 2 Turns, 0.2 ID, #18 AWG Enamel, Closewound RFC1 -- 20 Turns, 0.30 ID, #20 AWG Enamel, Closewound RFC2 -- Ferroxcube VK-200 -- 19/4B R1 -- 10 k, 1/2 W Thin Film R2 -- 10 k, 1/4 W R3 -- 10 Turns, 10 k R4 -- 1.8 k, 1/2 W Board -- G10, 62 Mils
Figure 1. 150 MHz Test Circuit
MRF137 2
MOTOROLA RF DEVICE DATA
50 f = 100 MHz Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 150 MHz 40 200 MHz 30
20 f = 100 MHz 15 150 MHz 200 MHz
10
20 VDD = 28 V IDQ = 25 mA
5
10 0
VDD = 13.5 V IDQ = 25 mA
0
0.5
1 1.5 Pin, INPUT POWER (WATTS)
2
0
0
1
2 Pin, INPUT POWER (WATTS)
3
4
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
40 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) f = 400 MHz IDQ = 25 mA 30 VDD = 28 V
50 Pin = 1 W
40
30
0.5 W
20 VDD = 13.5 V 10
20
0.25 W
10 IDQ = 25 mA f = 100 MHz 0
0
0
2
4 6 Pin, INPUT POWER (WATTS)
8
10
12
20 24 16 VDD, SUPPLY VOLTAGE (VOLTS)
28
Figure 4. Output Power versus Input Power
Figure 5. Output Power versus Supply Voltage
50 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Pin = 1.5 W
50
40
40 Pin = 2 W 30 1.5 W
30
0.75 W 0.5 W
20
20
0.75 W
10 IDQ = 25 mA f = 150 MHz 0 12 20 24 16 VDD, SUPPLY VOLTAGE (VOLTS) 28
10 IDQ = 25 mA f = 200 MHz 0 12 16 20 24 VDD, SUPPLY VOLTAGE (VOLTS) 28
Figure 6. Output Power versus Supply Voltage
Figure 7. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF137 3
50 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS)
30 25 20 15 10 5 0 -9 TYPICAL DEVICE SHOWN, VGS(th) = 3 V VDD = 28 V IDQ = 25 mA Pin = CONSTANT
40 Pin = 8 W 30 5W 20 2W 10 IDQ = 25 mA f = 400 MHz 0 12 16 20 24 VDD, SUPPLY VOLTAGE (VOLTS) 28
400 MHz
150 MHz
-8
-6 -4 -2 0 VGS, GATE-SOURCE VOLTAGE (VOLTS)
1
2
3
Figure 8. Output Power versus Supply Voltage
Figure 9. Output Power versus Gate Voltage
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
3 I D, DRAIN CURRENT (AMPS) TYPICAL DEVICE SHOWN, VGS(th) = 3 V 2
1.02 ID = 1.25 A 1A 1 750 mA 0.98
VDS = 10 V 1
0.96 0.94 25 mA
500 mA
VDS = 28 V
200 mA
0
1
2 3 4 5 6 VGS, GATE-SOURCE VOLTAGE (VOLTS)
7
0.92 - 25
0
25
50 75 100 125 TC, CASE TEMPERATURE (C)
150
175
Figure 10. Drain Current versus Gate Voltage (Transfer Characteristics)
Figure 11. Gate Source Voltage versus Case Temperature
200 180 I D, DRAIN CURRENT (AMPS) 160 C, CAPACITANCE (pF) 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 28 Crss Ciss Coss VGS = 0 V f = 1 MHz
10 5 TC = 25C
2 1 0.5
0.1
1
2
5 10 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
60
100
Figure 12. Capacitance versus Drain-Source Voltage
Figure 13. DC Safe Operating Area
MRF137 4
MOTOROLA RF DEVICE DATA
RFC2 R4 BIAS ADJUST R3 D1 C9 R2 R1 RF INPUT Z1 C5 C1 C6 C2 Z2 Z3 DUT C7 C3 C4 Z4 Z5 Z6 RFC1 C8 C10 + - C11 C12 C13 VDD = 28 V
RF OUTPUT
C1, C2, C3, C4 -- 0 - 20 pF Johanson, or equivalent C5, C8 -- 270 pF, 100 Mil Chip C6, C7 -- 24 pF Mini-Unelco, or equivalent C9 -- 0.01 F, 100 V, Disc Ceramic C10 -- 100 F, 40 V C11 -- 0.1 F, 50 V, Disc Ceramic C12, C13 -- 680 pF Feedthru D1 -- 1N5925A Motorola Zener R1, R2 -- 10 k, 1/4 W R3 -- 10 Turns, 10 k
R4 -- 1.8 k, 1/2 W Z1 -- 2.9 x 0.166 Microstrip Z2, Z4 -- 0.35 x 0.166 Microstrip Z3 -- 0.40 x 0.166 Microstrip Z5 -- 1.05 x 0.166 Microstrip Z6 -- 1.9 x 0.166 Microstrip RFC1 -- 6 Turns, 0.300 ID, #20 AWG Enamel, Closewound RFC2 -- Ferroxcube VK-200 -- 19/4B Board -- Glass Teflon, 62 Mils
Figure 14. 400 MHz Test Circuit
200 Zin 150 200 f = 100 MHz 400 150 f = 100 MHz ZOL*
400
VDD = 28 V, IDQ = 25 mA, Pout = 30 W f MHz 100 150 200 400 Zin{ Ohms 2.11 - j11.07 1.77 - j7.64 1.85 - j3.75 1.74 + j3.62 ZOL* Ohms 8.02 - j2.89 5.75 - j3.02 3.52 - j2.67 2.88 - j1.52
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Figure 15. Large-Signal Series Equivalent Input and Output Impedance, Zin, ZOL*
MOTOROLA RF DEVICE DATA
MRF137 5
f (MHz) 2.0 5.0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800
S11 |S11| 0.977 0.919 0.852 0.817 0.814 0.811 0.812 0.813 0.815 0.816 0.817 0.817 0.818 0.820 0.821 0.822 0.823 0.824 0.825 0.827 0.829 0.831 0.836 0.846 0.853 0.853 0.856 0.857 0.861 0.865 0.875 0.881 0.886 0.887 0.888 0.896 0.907 0.910 0.910 0.920 0.938 0.943 0.934 0.940 0.953 0.959 - 32 - 70 - 109 - 140 - 153 - 159 - 164 - 166 - 168 - 170 - 171 - 172 - 173 - 173 - 173 - 174 - 175 - 175 - 176 - 176 - 177 - 177 - 178 - 178 - 179 - 179 - 179 + 179 + 179 + 178 + 178 + 178 + 177 + 177 + 176 + 176 + 175 + 175 + 174 + 174 + 173 + 171 + 170 + 170 + 169 + 168 |S21| 59.48 48.67 33.50 19.05 13.11 9.88 7.98 6.66 5.708 5.003 4.560 4.170 3.670 3.420 3.170 2.980 2.826 2.650 2.438 2.325 2.175 2.084 1.824 1.621 1.462 1.319 1.194 1.089 1.014 0.927 0.876 0.810 0.755 0.694 0.677 0.625 0.603 0.585 0.563 0.543 0.533 0.515 0.491 0.475 0.477 0.467
S21 163 142 122 106 99 95 92 89 86 84 83 81 80 79 79 78 77 76 75 73 72 71 69 66 64 61 59 56 54 51 49 46 44 41 39 36 34 32 30 28 26 24 22 22 21 17 |S12| 0.011 0.024 0.032 0.037 0.038 0.038 0.038 0.038 0.038 0.038 0.038 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.040 0.040 0.040 0.042 0.043 0.045 0.046 0.046 0.051 0.052 0.055 0.058 0.061 0.065 0.069 0.074 0.078 0.079 0.084 0.090 0.093
S12 67 44 29 16 14 13 12 12 11 11 12 13 13 13 13 13 14 14 14 15 16 16 18 21 23 25 27 30 32 35 37 40 43 43 43 45 45 45 45 46 47 47 46 48 48 48 |S22| 0.661 0.692 0.747 0.768 0.774 0.782 0.787 0.787 0.787 0.787 0.787 0.787 0.788 0.788 0.788 0.788 0.788 0.790 0.792 0.793 0.796 0.799 0.805 0.816 0.822 0.833 0.828 0.842 0.849 0.856 0.866 0.870 0.875 0.888 0.890 0.898 0.913 0.918 0.945 0.952 0.974 0.958 0.953 0.943 0.957 0.957
S22 - 36 - 78 - 117 - 146 - 157 - 162 - 165 - 168 - 169 - 170 - 171 - 172 - 172 - 173 - 173 - 173 - 173 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 174 - 176 - 177 - 177 - 177 - 179
Table 1. Common Source Scattering Parameters 50 System VDS = 28 V, ID = 0.75 A
MRF137 6
MOTOROLA RF DEVICE DATA
+ j50 + j25 + j100 + j150 +150 + j10 800 400 0 + j250 + j500
10 25 50 100 150 250 500
+ 90 +120 + 60 800 + 30 600 400 180 0.1 - j500 - j250 S12 -150 - j150 - j100 -120 - 90 - 60 - 30 f = 50 MHz
.08 .06 .04 .02
0
150 f = 50 MHz - j10 S11 - j25 - j50
Figure 16. S11, Input Reflection Coefficient versus Frequency VDS = 28 V ID = 0.75 A
Figure 17. S12, Reverse Transmission Coefficient versus Frequency VDS = 28 V ID = 0.75 A
+ 90 +120 + 60 f = 50 MHz + 30 150 180 10 400 800 0 0 800
25
+ j50 + j25 + j100 + j150
+150
+ j10
+ j250 + j500
50 100 150 250 500
8
6
4
2
400 150 f = 50 MHz
- j500 - j250 S22 - j150 - j100 - j50
-150
S21
- 30
- j10
-120 - 90
- 60
- j25
Figure 18. S21, Forward Transmission Coefficient versus Frequency VDS = 28 V ID = 0.75 A
Figure 19. S22, Output Reflection Coefficient versus Frequency VDS = 28 V ID = 0.75 A
MOTOROLA RF DEVICE DATA
MRF137 7
DESIGN CONSIDERATIONS The MRF137 is a RF power N-Channel enhancement mode field-effect transistor (FET) designed especially for VHF power amplifier applications. Motorola RF MOS FETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V-groove vertical power FETs. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation. DC BIAS The MRF137 is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. See Figure 10 for a typical plot of drain current versus gate voltage. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF137 was characterized at IDQ = 25 mA, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple
resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF137 may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. (See Figure 9.) AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar VHF transistors are suitable for MRF137. See Motorola Application Note AN721, Impedance Matching Networks Applied to RF Power Transistors. The higher input impedance of RF MOS FETs helps ease the task of broadband network design. Both small signal scattering parameters and large signal impedances are provided. While the s-parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF MOS power FETs. RF power FETs are triode devices and, therefore, not unilateral. This, coupled with the very high gain of the MRF137, yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. Two port parameter stability analysis with the MRF137 s-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A for a discussion of two port network theory and stability.
MRF137 8
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
A U M Q
1 4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
M
DIM A B C D E H J K M Q R S U
R
2 3
B
S
D K
INCHES MIN MAX 0.960 0.990 0.370 0.390 0.229 0.281 0.215 0.235 0.085 0.105 0.150 0.108 0.004 0.006 0.395 0.405 40 _ 50 _ 0.113 0.130 0.245 0.255 0.790 0.810 0.720 0.730
MILLIMETERS MIN MAX 24.39 25.14 9.40 9.90 5.82 7.13 5.47 5.96 2.16 2.66 3.81 4.57 0.11 0.15 10.04 10.28 40 _ 50 _ 2.88 3.30 6.23 6.47 20.07 20.57 18.29 18.54
J H C E
SEATING PLANE
STYLE 2: PIN 1. 2. 3. 4.
SOURCE GATE SOURCE DRAIN
CASE 211-07 ISSUE N
MOTOROLA RF DEVICE DATA
MRF137 9
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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MRF137 10
*MRF137/D*
MRF137/D MOTOROLA RF DEVICE DATA

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